Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy.
Identifieur interne : 000407 ( Main/Exploration ); précédent : 000406; suivant : 000408Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy.
Auteurs : RBID : pubmed:24177750Abstract
Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.
DOI: 10.1088/0957-4484/24/47/475302
PubMed: 24177750
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Le document en format XML
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<author><name sortKey="Kelrich, A" uniqKey="Kelrich A">A Kelrich</name>
<affiliation wicri:level="1"><nlm:affiliation>Electrical Engineering Faculty, Technion-Israel Institute of Technology, Haifa 32000, Israel.</nlm:affiliation>
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<author><name sortKey="Calahorra, Y" uniqKey="Calahorra Y">Y Calahorra</name>
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<author><name sortKey="Greenberg, Y" uniqKey="Greenberg Y">Y Greenberg</name>
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<author><name sortKey="Gavrilov, A" uniqKey="Gavrilov A">A Gavrilov</name>
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<author><name sortKey="Cohen, S" uniqKey="Cohen S">S Cohen</name>
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<front><div type="abstract" xml:lang="en">Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.</div>
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<Abstract><AbstractText>Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.</AbstractText>
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